Atomic Structure of Si(111):GaSe 1x1
نویسندگان
چکیده
S. Meng, A. Bostwick, B.R. Schroeder, E. Rotenberg, F.S. Ohuchi, and M.A. Olmstead Department of Physics, University of Washington, Seattle, Washington 98195 USA Advanced Light Source, Ernest Orlando Lawrence Berkeley National Laboratory, University of California, Berkeley, California 94720 USA Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195 USA
منابع مشابه
Chemical passivity of III-VI bilayer terminated Si(111)
The chemical stability of Si(111), terminated with bilayer AlSe and GaSe, upon exposure to atmosphere, N2 and O2 was investigated with core-level and valence band photoelectron spectroscopy. Si(111):GaSe and Si(111):AlSe both form stable, unreconstructed surfaces with no states in the silicon energy gap; their atomic structures are nearly identical. However, similarities in surface electronic a...
متن کاملHeterointerface formation of aluminum selenide with silicon: Electronic and atomic structure of Si(111):AlSe
This paper presents a new, stable, unreconstructed surface termination of silicon, Si(111):AlSe. The structure forms the interface layer when aluminum sesquiselenide (Al2Se3) is deposited on Si(111) by molecular beam epitaxy. The atomic structure of the interface layer was investigated using angle-resolved valence and core-level photoelectron spectroscopy and diffraction. The Al2Se3/Si(111) int...
متن کاملInteraction of Se and GaSe with Si(111)
Interface formation during the initial stage of heteroepitaxial growth plays a crucial role in controlling subsequent growth of the overlayer. The interface formation mechanism and resultant structure are determined not only by physical parameters of the grown material and the substrate, such as lattice symmetry and mismatch, but also by chemical reactions taking place between overlayer constit...
متن کاملHeteroepitaxial Growth of the Intrinsic Vacancy Semiconductor Al2Se3 on Si(111): Initial Structure and Morphology
The evolution of nanostructure morphology and local chemical environment during heteoepitaxial growth of aluminum selenide on Si(111) was investigated with scanning tunneling microscopy and high resolution photoemission spectroscopy. Despite the strong similarity to GaSe in atomic and electronic structure during deposition of the first AlSe bilayer, subsequent growth is quite different, resulti...
متن کاملCHAPTER FIVE STRUCTURAL DETERMINATION OF THE NA/SI(lll)lXl SURFACE: SUBSTRATE BULK-TERMINATION AND ADSORPTION GEOMETRY
It has been suggested from experimental and theoretical results[ l-51 that the structure of the underlying Si for the Na/Si(ll 1)1x1 interface is bulk-terminated, with Na adsorbed in high-symmetry sites on the surface. By using X-Ray Standing Waves (XSW) on both Si and Na core levels, we directly determine the geometry of this interface and find that the suggested bulk-terminated structure is c...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2000